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| CNY65EXI Vishay Telefunken Optocoupler with Phototransistor Output Description The CNY65EXI consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic package. The single components are mounted in opposite oneanother, providing a distance between input and output for highest safety requirements of > 3 mm. Applications Galvanically separated circuits, suitable for intrinsic safety circuits Electrical apparatus used in a potentially explosive atmosphere: EN 50014-1977/VDE 0171 Part 1/5.78 General instructions EN 50020-1977/VDE 0171 Part 7/5.78 Intrinsic safety `i' section: 5.5, 5.5.4, 5.7 95 10536 Features D Suitable for intrinsic safety circuits according to test certificate No. Ex-81/2158 of PTB A (+) C D Isolation material according to D Low temperature coefficient of CTR D Creepage current resistance of isolation material according to VDE 0303/DIN 53480: KC 475 95 10850 UL94 - VO - flammability class C (-) E D Isolation test voltage 11.6 kV D Test class 25/100/21 DIN 40045 D Very low coupling capacity of typical 0.3 pF therefore high noise voltage resistant D Current Transfer Ratio (CTR) = 50 to 300% D Coupling System J Order Instruction Ordering Code CNY65EXI CTR Ranking 50 to 300% Remarks Exi = Intrinsic safety 126 Rev. A3, 11-Jan-99 CNY65EXI Vishay Telefunken Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward Current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Value 5 75 1.5 120 100 Unit V mA A mW C tp 10 ms Tamb 25C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC ICM PV Tj Value 32 7 50 100 130 100 Unit V V mA mA mW C tp/T = 0.5, tp 10 ms Tamb 25C Coupler Parameter DC isolation test voltage Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Test Conditions t = 1 min Tamb 25C Symbol VIO Ptot Tamb Tstg Tsd Value 11.6 250 -55 to +85 -55 to +100 260 Unit kV mW C C C 2 mm from case, t 10 s Rev. A3, 11-Jan-99 127 CNY65EXI Vishay Telefunken Electrical Characteristics (Tamb = 25C) Input (Emitter) Parameter Forward voltage Test Conditions IF = 50 mA Symbol VF Min. Typ. 1.25 Max. 1.6 Unit V Output (Detector) Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, If = 0, E = 0 Symbol VCEO VECO ICEO Min. 32 7 Typ. Max. Unit V V nA 200 Coupler Parameter DC isolation test voltage Isolation resistance Collector saturation voltage Cut-off frequency Test Conditions t = 1 min VIO = 1 kV, 40% relative humidity IF = 10 mA, IC = 1 mA Symbol VIO1) RIO1) VCEsat fc Ck 110 0.3 Min. 11.6 Typ. 1012 0.3 Max. Unit kV W V VCE = 5 V, IF = 10 mA, RL = 100 W Coupling capacitance f = 1 MHz 1) Related to standard climate 23/50 DIN 50014 kHz pF Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 5 V, IF = 10 mA Type CNY65EXI Symbol CTR Min. 0.5 Typ. 1 Max. 3 Unit 128 Rev. A3, 11-Jan-99 CNY65EXI Vishay Telefunken Switching Characteristics Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 5 mA, RL = 100 W (see figure 1) Symbol td tr tf ts ton toff ton toff Typ. 2.6 2.4 2.4 0.3 5.0 3.0 25.0 42.5 Unit VS = 5 V, IF = 10 mA, RL = 1 kW (see figure 2) ms ms ms ms ms ms ms ms 0 IF RG = 50 W tp 0.01 T IF +5V IC = 5 mA; Adjusted trough input amplitude IF 0 Channel I Oscilloscope RL 1 MW CL 20 pF IC 100% 90% tp 96 11698 + tp = 50 ms t 50 W 95 10900 100 W Channel II Figure 1. Test circuit, non-saturated operation 10% 0 0 IF RG = 50 W tp 0.01 T tp = 50 ms IF = 10 mA +5V IC td ton tp tion td tr ton (= td + tr) pulse duradelay time rise time turn-on time tr ts toff ts tf toff (= ts + tf) tf t + storage time fall time turn-off time Channel I 50 W 95 10843 Oscilloscope RL 1 MW CL 20 pF Channel II 1 kW Figure 2. Test circuit, saturated operation Figure 3. Switching times Rev. A3, 11-Jan-99 129 CNY65EXI Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified) 200 P tot - Total Power Dissipation ( mW ) 160 1000 VCE=20V IF=0 100 120 Coupled Device 80 Phototransistor IR-Diode ICEO- Collector Dark Current, with open Base ( nA ) 100 10 40 0 0 1 25 50 75 0 96 12000 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) 95 11003 Tamb - Ambient Temperature ( C ) Figure 4. Total Power Dissipation vs. Ambient Temperature 1000.0 IC - Collector Current ( mA ) Figure 7. Collector Dark Current vs. Ambient Temperature 100 VCE=5V 10 I F - Forward Current ( mA ) 100.0 10.0 1 1.0 0.1 0.1 0 96 11862 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) 95 11012 0.1 1 10 100 IF - Forward Current ( mA ) Figure 5. Forward Current vs. Forward Voltage CTR rel - Relative Current Transfer Ratio 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -30 -20 -10 0 10 20 30 40 50 60 70 80 Figure 8. Collector Current vs. Forward Current 100 IC - Collector Current ( mA ) VCE=5V IF=10mA IF=50mA 10mA 10 5mA 2mA 1 1mA 0.1 0.1 95 11013 1 10 100 96 11911 Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature Tamb - Ambient Temperature ( C ) VCE - Collector Emitter Voltage ( V ) Figure 9. Collector Current vs. Collector Emitter Voltage 130 Rev. A3, 11-Jan-99 CNY65EXI Vishay Telefunken V CEsat - Collector Emitter Saturation Voltage ( V ) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 10 IC - Collector Current ( mA ) 10% 100 95 11017 t on / t off - Turn on / Turn off Time ( m s ) 50 toff 40 CTR=50 % 30 ton Saturated Operation VS=5V RL=1kW 20 20 10 0 0 5 10 20% 15 96 11912 IF - Forward Current ( mA ) Figure 10. Collector Emitter Saturation Voltage vs. Collector Current 1000 CTR - Current Transfer Ratio ( % ) VCE=5V 100 Figure 12. Turn on / off Time vs. Forward Current t on / t off - Turn on / Turn off Time ( m s ) 20 ton 15 Non Saturated Operation VS=5V RL=100W 10 toff 10 5 1 0.1 95 11015 0 1 10 100 95 11016 0 2 4 6 8 10 IF - Forward Current ( mA ) IC - Collector Current ( mA ) Figure 11. Current Transfer Ratio vs. Forward Current Type Figure 13. Turn on / off Time vs. Collector Current CNY65 EXI Date Code (YM) 918 J TK19 EEx EX - 81 / 2158U Coupling System Indicator Company Logo Production Location 15088 Intrinsic Safety Logo PTB Certificate Number Figure 14. Marking example Rev. A3, 11-Jan-99 131 CNY65EXI Vishay Telefunken Dimensions of CNY65EXI in mm weight: ca. 1.40 g creepage distance: air path:y 14 mm y 14 mm after mounting on PC board 14763 132 Rev. A3, 11-Jan-99 |
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